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 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT 23
2SA1235A
FEATURES
TRANSISTORPNP (c)
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.2 W Tamb=25ae(c) Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V (BR) CBO V (BR) CEO V(BR)EBO ICBO IEBO
Unit : mm
unless
Test
otherwise
specified(c)
MIN -60 -50 -6 -0.1 -0.1 150 90 -0.3 -1 180 V V MHz 500 MAX UNIT V V V |I A |I A
conditions
IC = -100 |I A IE=0 IC = -100 |I AIB=0 IE= -100 |I AIC=0 VCB= -60 V, IE =0 VEB= -6V, IC =0 IC= -1mA
hFE(c) VCE= -6V, 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE (sat) VBE (sat)
VCE= -6V, IC = -0.1mA IC=-100 mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -6V, IC = -10mA VCE=-6VIE=0 f=1MHz VCE=-6 V I E=0.3mA, f=100Hz RG=10K?
fT Cob NF
5 20
dB dB
Noise figure CLASSIFICATION OF hFE (1)
Rank Range Marking E 150~300 M* E
F 250~500 M* F
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
|E
0.2
E1
E
L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100


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